1、NOR flash, NAND flash, SDRAM 結構和容量分析 1.NOR flash結構和容量分析 例如:HY29LV160 o 引腳分別如圖： 邯I U 牌IU AH3I U 叩2 U A|11| = 憫= W匚二 半| = 叩9- NC 二 10 II RESET；二：1J NO U 14 RYBY* = 10 啊U 叩H二 屮1匚 碉u 半U 屮= u F 18 19 務 21 / TSOP48 屮|二 A|2|U 刖匚 / UCEC的 nnnflnnnnnnn = nnnnnnn=nE;R 4MVI心 04M40!wl3M3?lnl小制32|311301創2MKI25t一

2、A19：0 DQ|?:O CE# DQ14:8 OE* DQ15/A-1 WES RY；BY? RESET? BYTE* w I I I I I 旬1 in x1S d-evs 4. Ths 41h is onl/ rsquirad for 512Mb and 1Gb devi-as. Table 8. Address Definitions Address Definition A0-A7 Column Address A9 A26 Page Address A9-A13 Address in Block A14 -A26 Block Address A8 A8 is set Law or

3、High by the OOh or01h Command, and is Dont Care in x1 6 devices 256word需要8bit來表示，剛好A0A7的8位地址就夠用了，所以不存在half page之說。Readl對于16位的device來說只有00H的命令，而沒有01H的命 令。而訪問的區域只存在main area和sparearea因datasheet是8位和16位 公用的，所以set commands的表格跟8位是一樣的，只是01H的命令對于16位 的無效。具體如何參照datasheet,如下圖： Pointer Operation of K9K1G16X0A(X

4、16) Samsung NA.N D Flash has two address painter commands as a substitute for tha most significant column address. * 00h command sets the pointer to A are3(0-25 5TOrd ) and 50h command seis tha po inter to B* a re a (2 56-25 3.w rd). Wrth thes-e commands the starting column acidrssscan be sat taany

5、of a hote pag9(0-233Aord). 00h* ar * 50hf is sustainsd until anoithpmddrmsspointrcom- nrand is in putted To program data starting from A or B area. QOh or 5Qh* command must be in putted bafara Mh* wmma nd is writ- tan. A complete read operatk)n prior to 80h command is not neo-essary. Command Pointer

6、 position Area OOh 0 4- 255 word rrgin array(A) 50 h 256 - 263 .TOrd spare array(B) Table 3. Destination of the pointer Mr xT B1 3*53 2S5 WOC 8VVOrC HA4 mterrai P畤R%自e P毎它THDTmy：yp CopyBsc P-njDuTiny)are ava aoe o re 2y.3p.4i oaeof 1 o:eEir. 3Te 7inc0FF3cc 3。匚苗 3告：fQr re-asatau3 QfbWi PaeowatQ*. Cau

7、tion : Any -*ut3 are Dror otez sxc&ot for aoo-ve aonTiac set of Tass *. 28=256word 32個page需要5bit來表示,占用A13:9,即該page在塊內的相對地址，即 page address a 25=32page （一個 block 有 32 個 page） Block的地址是山A14以上的bit來表示，例如512Mb的NAND,共4096block, 因此，需要12個bit來表示,即A25:14,如果是1Gbit的528byte/page的 NAND Flash,則 block address 用 A26:

8、14表示。 2 26-14+1）=8192blocks （總共有這些 block） 2 26-9+1 =226=page （總共有這些 pages） 其他諸如地址傳遞等與16位是一樣的。可以參照8位的進行修改移用。 Figure 2. K9F2G08X0A Array Organization 128K Pages (=2.C48 Blocks) Column Address Coiumni Address Row Add ross Row Add r6S& Row Address (三)下面針對，頁面為2Kbyte, IO數據為8位 iroo I/O 1 1/0 2 I/O 3 I/O 4

9、I/O 5 I/O 6 1/0 7 1st Cycte Ac A： A2 Aa As As A7 2nd Cycle As Am Aia A- L L L L 3rd 比2 A-3 Ar 恥 A-S A-? A-a AiS 4th Cycle A2G A21 4 A23 A25 A25 A27 5th Cycle A2B - L - L L NOTE : Co jmn Address : Stsa 為 Address ofRe尹 怡二 Lmustoe set to,*Lw/. Tra davg gror&3 any adddona ipjt ofcycas tnan reqj red. 2K

10、Page跟512page不冋的地方在于：512page對main area和spare area的讀寫是分開來 讀寫的，由命令來決左是寫入或讀入main area還是spare area,所以分為readl, read2模 式。而2k page對main area和spare area的讀寫是一起尋址的，沒有命令來決怎是寫入或 讀入main area還是spare area.對于2K可以當成4個512byte來讀，也可以當成一個2k 的page來讀,尋址命令參考datasheet.入下圖： 2K+64=2111colum n 211=2048 212=4096 而204821114096,所以

11、column地址也必須用12個bit表示。 2111是每個page的最后一個數值，所以他的地址為： A11-A0: 0000 1000 0011 1111 所以是 08H 第二列,3FH 第一列地址 Table 1. Command Sets Funetidrt Ut Cyclo 2rtd Cyel6 Aeedptdbld Comtnartd durine Busy Read OQh 3Qh Read for Copy Back OOh 35h Read ID 0h - Reset FFh - 0 Page Prog伯制 BOh 10h *Lva-Piane Page Program5* Mh

12、11h ftih10h Copy-Back Program B5h 10h ZsPlaz Cop-y-Baek Pr旳 &5h11h aih10h Block. Erase 6Qh DOh Kva-Pianci BQck Era&e 60h60h DOh Random Data lnputs, 85h - Random Data Output* 05h EOh Read Status： 70h 0 Read EDC Status21 7D- 0 NOTE: 1. Random DaisInputOjipjtcan dsexez-jtoj n a 2. Rsa3 EDC Stst a a*vs

13、on jy 3. Any commarxj Dstween 11h 3*d 81h 3 prooied excaot 70h axJ FFn. 4. KBF2GD8-R0A does not sup port Two -Plan e operati on. K9F2G0SX0A supports copy-back with EDC to rd cumulate bit errors To make EDC vaW, the page program operaton shouki be performed an either whoFe page(2H2byte) or sector(52S

14、byte). f4odifyimg the data of a sector by Random Data Input bafore CopyBack Program must bo performed for th whole seetor and is allowed only onee per eaeh seetor. Any partial modification smallorthan a sector corrupts th on*chip EDC codes A 2,112-byte pae js composed Qf sectors of 528-byte and each 526bytQ sector com posed of 512-t-yte mam area and 1-6-byte spl6 Sector C 1,024 - 1,535 G 2,080 - 2,095 4th 520-B/e Seo&f CT 1.536 -2.047 2066-2,111 64個p