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Chapter3
DigitalCircuitsAbinarynumbersystemcontainstwosymbolsandasetofoperationsButwhatdoesa'0'ora'1'looklikeinreallife?Manythingscanrepresents0'sand1's,butweareinterestedinrepresentingthemusing"electricalsignals"Then,howtorepresenta0or1withanelectricalsignal(voltageorcurrent)?Weneedtoknowtheknowledgeoftheelectricalaspectsofdigitalcircuits.3.1LogicSignalsandGatesLogicSignals
-alogicsignalmaylooklikethis…tv(t)vthresholdwedefineathresholdtorepresentwhenweconsiderthesignalaLOGIC0orLOGIC1.Digitaldesignersoftenusethewords“LOW”and“HIGH”inplaceof“0”and“1”.LogicSignalsandGatesHowtogettheHIGHandLOWVoltage?AssignHIGHto0or1?VOUTVINVccR獲得高、低電平的基本原理PositiveLogic(正邏輯)10NegativeLogic(負邏輯)10LogicSignalsandGatesLogicCircuit
-acircuitthatproduceslogicoutputsdependingonthelogicinputs
ex)LogicWeneedtoknow-theelectricalbehaviorofthecircuit-thelogicrelationbetweeninputsandoutputsBasicConceptsTwotypesoflogiccircuits:Combinationallogiccircuit(組合邏輯電路)Sequentiallogiccircuit(時序邏輯電路)AlogiccircuitwhoseoutputsdependonlyonitscurrentinputsAlogiccircuitwithmemory,whoseoutputsdependonthecurrentinputsandthesequenceofpastinputsBasiclogicfunctions:AND,OR,NOTBasicLogicFunction:AND000010100111ABZLogicExpression(邏輯表達式)Z=A·BSwitch:1-on,0-offLamp:1-Light,0-outProducea1outputifandonlyifallofitsinputsare1TruthTable
(真值表)&ABZABZ(邏輯符號)ABZLogicSymbolBasicLogicFunction:ORLogicExpressionZ=A+BABZABZProducea1ifandonlyifoneormoreofitsinputare1
≥1ABZABZ000011101111TruthTableLogicSymbolAZ0110LogicExpressionY=A=A’AZRProduceanoutputvaluethatistheoppositeofitsinputvalue.UsuallycalledanInverter
(反相器)1ZAAZBasicLogicFunction:NOTTruthTableLogicSymbolNANDandNORNAND(與非)
LogicExpressionZ=(A·B)’
LogicSymbolNOR(或非)
LogicExpressionZ=(A+B)’
LogicSymbol
&≥1TruthTable&≥1Operation
NAND
NOR
Symbol
ExpressionY=(A?B)’Y=(A+B)’AB
0
0
1
11
Y
1
1
1
0
Y
1
0
0
0
100ComplexLogicfunctionAND-OR-INVERT
(與或非)ABCD&≥1YABYCDF=(AB+CD)’XORandXNORXOR(ExclusiveOR,異或)2-inputgatewhoseoutputis1iftheinputsaredifferent.XNOR(ExclusiveNOR,同或)
2-inputgatewhoseoutputis1iftheinputsaresame.F=AB=A’·B+A·B’F=A⊙B=A·B+A’·B’ABF000011101110XORABF001010100111XNORAB=(A⊙B)’OperationXORXNOR
Symbols
ExpressionY=AB
=AB+ABY=A⊙B=AB+ABAB
0
0
0
1
1
0
11
Y
0
1
1
0
Y
1
0
0
1
=1ABYABYABY=ABYTruthtableAB=A⊙BA⊙B=AB3.2LogicFamiliesLogicGates
-we'veseenthebasiclogicgatesthatweusetoformmorecomplexlogicexpressions
INV,AND,NAND,OR,NOR,XOR,XNORLogicSignaling
-we'veseenhowweuseanelectricalsignaltorepresentandtransmitlogicvaluestAB10101011113.2LogicFamiliesNowwewanttoseehowweactuallycreatethesecircuitsandsignalsusingelectronicsTherearedifferentways(orcircuits)toimplementlogicgatesThecircuitsaredesignedtointerfacewithothercircuitswiththesametypeofdesignAcollectionofIC'sdesignedtointerfacewitheachotheriscalleda"LogicFamily"Themostcommonfamilieswedealwithare:
1)CMOS 2)TTL3.3CMOSLogicCMOSLogiclevels5.0V3.5V1.5V0.0VATypicalLogicCircuit:5-VoltPowerSupplyOtherPower-SupplyVoltages:3.3,2.5or1.8VoltsLogic1(High)Logic0(Low)undefinedMOSFET(MOS晶體管)twotypesofMOSFET's:NMOS,PMOSDrain(漏極)Source(源極)Gate(柵極)Vgs+NMOSSource(源極)Drain(漏極)Gate(柵極)
+VgsPMOS-thesedevicecanbethoughtofasa"voltagecontrolledresistor"-alterthevoltageontheGatetoturnON/OFFthecurrentflowMOSFET(MOS晶體管)twotypesofMOSFET's:NMOS,PMOSDrain(漏極)Source(源極)Gate(柵極)Vgs+NMOSUsually:Vgs>=0
Vgs=0Rds
VeryHigh
OFF(截止狀態)
VgsRds
ON(導通狀態)MOSFET(MOS晶體管)twotypesofMOSFET's:NMOS,PMOS:Source(源極)Drain(漏極)Gate(柵極)
+VgsPMOSUsually:Vgs<=0
Vgs=0RdsVeryHigh
Off(截止狀態)
Vgs
Rds
On(導通狀態)MOSFET(MOS晶體管)ThegateofaMOStransistorhasaveryhighimpedance.(overamegohm,大于兆歐)Regardlessofgatevoltage,almostnocurrentbetweengate-sourceorgate-drain (漏電流leakagecurrent,microampereA)ThegateofaMOStransistoriscapacitivelycoupledtothesourceanddrain.
柵極與源和漏極之間有電容耦合。輸入信號轉換時,電容充放電,功耗較大BasicswitchingcircuitofMOSFETvI+–vO–+iD+VDDRDDGSChoosingproperparameters,LOWInput,OFF,HIGHOutputHIGHInput,ON,LOWOutputBasicCMOSInverterCircuitFunctionalBehavior1、VIN=0.0V VGSN=0.0V,TnOFF VGSP=VIN–VDD=–5.0V,TpON
VOUT
VDD=5.0V2、VIN=VDD=5.0V VGSN=5.0V,TnON VGSP=VIN–VDD=0.0V,TpOFF VOUT
0VDD=+5.0VVOUTVINTpTnGDSSBasicCMOSInverterCircuitVDD=+5.0VVOUTVINTpTnGDSSVDDVINVOUTOnwhenVINislowOnwhenVINishigh(p-channel)(n-channel)CMOSNANDGate
FunctionalBehavior1、EitherInput(AorB)isLow,Then EitherT1,T3isOff EitherT2,T4isOn ZisHigh[ZVDD]2、BothInputs(AandB)areHigh,Then BothT1,T3areOn BothT2,T4areOff ZisLow[Z0V]VDD=+5.0VZABT1T2T4T3CMOSNORGateFunctionalBehavior
1、BothInputs(AandB)areLow,Then BothT1,T3areOff BothT2,T4areOn ZisHigh[ZVDD]2、EitherInput(AorB)isHigh,Then EitherT1,T3isOn EitherT2,T4isOff ZisLow[Z0V]VDD=+5.0VZABT1T2T4T3CMOS
NANDandNORgatesdonothaveidenticalelectricalperformance.Foragivensiliconarea,ann-channeltransistorhaslower“on”resistancethanap-channeltransistor.Therefore,whentransistorsareputinseries,k
n-channeltransistorshavelower“on”resistancethandok
p-channelones.Whoisfaster,k-inputNANDork-inputNORgate?k-inputNANDisfaster,morepopular.Fan-In(扇入)Fan-In,theNumberofInputsthataGatecanhave.TheAdditive“on”ResistanceofseriestransistorslimitstheFan-InofCMOSgates. (導通電阻的可加性限制了CMOS門的扇入數)WhoseFan-Inislarger,NANDorNOR?Typically,Fan-Inis4forNORgatesand6forNANDgates.Fan-In(扇入)AlargenumberofinputscanbemadebycascadinggateswithfewerinputsF=ABCDEFGHNon-invertingGatesVDD=+5.0VAZ(Non-invertingbuffers)非反相緩沖器HowtogetaANDGate?VDD=+5.0VABZCDCMOSAND-OR-INVERTGate
Z=AB+CDCABBADCDX=(A+B)?(C+D)DABCDABCOUT=D+A?(B+C)Challenge:??3.4ElectronicBehaviorofCMOSCircuitsLogicVoltageLevels(邏輯電壓電平)DCNoiseMargins
(直流噪聲容限)Fan-Out(扇出)Speed,PowerConsumption
(速度、功耗)Noise,ElectrostaticDischarge
(噪聲、靜電放電)Open-DrainOutputs,ThreeStateOutputs(漏極開路輸出、三態輸出)ElectricalNotlogic(Table3-3)DataSheet(數據表)Specifications(規格說明)3.5CMOSStaticElectricalBehaviorCMOSStaticBehavior
-"Static"or"DC"referstothegate'soperationwhentheinputsareNOTchanging
-alsocalled"SteadyState”CMOSDynamicBehavior
-Alsocalled"AC"performance3.5.1LogicLevelsandNoiseMarginsLogicLevelsandNoiseMarginsVOUTVIN5.01.53.55.0Typicalinput-outputtransfercharacteristicofaCMOSinverterVDD=+5.0VVOUTVINTpTn0101LogicLevelsSpecificationsHIGHABNOMALLOWVOLmaxVILmaxVIHminVOHminVCC-0.1Vground+0.1V0.7VCC0.3VCC3.5.1LogicLevelsandNoiseMarginsDCNoiseMargin(多大的噪聲會使最壞輸出電壓被破壞得不可識別)3.5.1LogicLevelsandNoiseMarginsVDDVoutHIGHVOHminVSSLOWVOLmaxVDDHIGHVIHminVSSLOWVILmaxVinNoiseMarginNoiseMarginHIGHStateNoiseMargin:(VOHmin-VIHmin)
LOWStateNoiseMargin:(VILmax-VOLmax)LeakageCurrentRegardlessofthevoltageappliedtotheinputofaCMOSdevice,theinputconsumesverylittlecurrent.Onlytheleakagecurrentofthetransistors’gates.thereisaspecificationthattellsushowmuchcurrentcanbeexpectedtoflow--IIH
:MaximumcurrentflowingwhendrivingaHIGH--IIL
:MaximumcurrentflowingwhendrivingaLOW3.5.1LogicLevelsandNoiseMargins3.5.2CircuitBehaviorwithResistiveLoadsVCCAZVCCRThevRpRnVThev
+VOUTVINResistiveLoads
-RequirenontrivialamountsofcurrenttooperateCMOSDrivingaLOWVOUT<=VOLmaxTheOutputsinkCurrent-Sinkingcurrent(吸收電流或灌電流)
IOLmax:MaximumcurrentthatcanbesinkedwhendrivingaLOW3.5.2CircuitBehaviorwithResistiveLoadsVCC=+5.0VRp>1MRnResistiveLoadsVOLmaxIOLmaxCMOSDrivingaHIGHVOUT>=VOHminTheOutputsourceCurrent-Sourcingcurrent(提供電流或拉電流)
IOHmax:MaximumcurrentthatcanbesourcedwhendrivingaHIGH3.5.2CircuitBehaviorwithResistiveLoadsVCC=+5.0VRpRn>1MResistiveLoadsVOHminIOHmax3.5.2CircuitBehaviorwithResistiveLoadsVOUT=0VCC=+5.0VRThevVThev
+VIN=1CMOSDrivingaLOWEstimatetheSinkingcurrent3.5.2CircuitBehaviorwithResistiveLoadsVCC=+5.0VRThevVThev
+VOUT=1VIN=0CMOSDrivingaHIGHEstimatetheSourcecurrent:3.5.3CircuitBehaviorwithNon-idealInputsSofar,wehaveassumedthattheHIGHandLOWinputstoaCMOScircuitareidealvoltages,veryclosetothepower-supplyrails.Iftheinputvoltageisnotclosetothepower-supplyrail-The“ON”transistormaynotbefully“ON”-The“OFF”transistormaynotbefully“OFF”Thesetwoeffectscombinetomovetheoutputvoltageawayformthepower-supplyrail.3.5.3CircuitBehaviorwithNon-idealInputsVCC=+5.0V4002.5kVIN1.5VVOUT4.31VVCC=+5.0V4k200VIN3.5VVOUT0.24V輸出電壓變壞(有電阻性負載時更差)更糟糕的是:輸出端電流,功耗3.5.4Fan-outFan-Out: -TheNumberofInputsthatthegatecandrivewithoutexceedingitsworst-caseloadingspecifications.Fan-outmustbeexaminedforbothpossibleoutputstates,HIGNandLOWOverallFan-out=Min(HIGH-stateandLOW-state)
【總扇出=min(高態扇出,低態扇出)】DCFan-outandACFan-out
(直流扇出和交流扇出)74HCTDrives74LSLOWFan-Out
(低態扇出):Fan-OUT
HIGHFan-Out(高態扇出):“excess”drivingcapability:(高態剩余驅動能力)CMOS
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