1、WAT 測量項目以及測試方法測量項目以及測試方法TD/DTD/DD: Sutter Dai2008/03/07上海宏力半導(dǎo)體制造有限公司上海宏力半導(dǎo)體制造有限公司Grace Semiconductor Manufacturing CorporationWAT Introduction1. WAT是什么2. WAT系統(tǒng)介紹3. WAT測試項目及方法上海宏力半導(dǎo)體制造有限公司上海宏力半導(dǎo)體制造有限公司Grace Semiconductor Manufacturing Corporation?WAT是什么是什么? Wafer Acceptance Test（晶片允收測試）半導(dǎo)體硅片在完成所有制程工藝

2、后，針對硅片上的各種測試結(jié)構(gòu)所進(jìn)行的電性測試。通過對WAT數(shù)據(jù)的分析，我們可以發(fā)現(xiàn)半導(dǎo)體制程工藝中的問題，幫助制程工藝進(jìn)行調(diào)整。上海宏力半導(dǎo)體制造有限公司上海宏力半導(dǎo)體制造有限公司Grace Semiconductor Manufacturing Corporation?WAT系統(tǒng)介紹Agilent 4284A CV MeterManual ProberAgilent 4156A IV MeterCascade Manual Prober上海宏力半導(dǎo)體制造有限公司上海宏力半導(dǎo)體制造有限公司Grace Semiconductor Manufacturing Corporation?WAT系統(tǒng)介紹

3、Agilent 4070Agilent 4070 systemTEL P8XL上海宏力半導(dǎo)體制造有限公司上海宏力半導(dǎo)體制造有限公司Grace Semiconductor Manufacturing Corporation?WAT系統(tǒng)介紹Agilent 4070 內(nèi)部結(jié)構(gòu)內(nèi)部結(jié)構(gòu)Agilent E4411B Spectrum AnalyzerAgilent 81110A Pulse Generator HP 4070 ServerAgilent 3458ADigit MultimeterAgilent 4284A CV Meter上海宏力半導(dǎo)體制造有限公司上海宏力半導(dǎo)體制造有限公司Grace S

4、emiconductor Manufacturing CorporationWAT 流程圖DataEDA ServerProduct informationTest ProgramDataCV MeterDC testerControl commandTest KeyServer4070ServerProbe cardWaferPIN NoSMUAuto-ProberRelay Metric上海宏力半導(dǎo)體制造有限公司上海宏力半導(dǎo)體制造有限公司Grace Semiconductor Manufacturing Corporation?WAT測試項目常見的幾種器件結(jié)構(gòu)常見的幾種器件結(jié)構(gòu)1. MOS

5、 device2. Field Device3. Junction4. Gate Oxide5. Resistor6. Bipolar Device7. Layout Rule Check上海宏力半導(dǎo)體制造有限公司上海宏力半導(dǎo)體制造有限公司Grace Semiconductor Manufacturing Corporation1. MOS Device上海宏力半導(dǎo)體制造有限公司上海宏力半導(dǎo)體制造有限公司Grace Semiconductor Manufacturing Corporation上海宏力半導(dǎo)體制造有限公司上海宏力半導(dǎo)體制造有限公司Grace Semiconductor Manuf

6、acturing Corporation以以 NMOS 為例：為例：Item nameIdsVt0Vt1IsubIoffBvdMethod of measurementVd=Vg=Vdd, Vs=Vb=0, measure Id, Ids=Id/WidthVd=0.1V, Vs=Vb=0, sweep Vg from 0V to 3V ,use maximum slope method,Vt0=Xintercept 1/2*VdVd=0.1V, Vs=Vb=0, sweep Vg from 0V to 2V ,measureId,Vt1=VgId=0.1uA*Width/LengthVd=Vd

7、d, Vs=Vg=0, sweep Vg from 0 to Vdd to getmaximum Isub currentVd=1.1Vdd, Vg=Vs=Vb=0, measure Id, Ioff=Id/WidthVg=Vs=Vb=0, sweep Vd from 0V to Vdstop(3Vdd),measure Id, Bvd=VdId=0.1uA/um上海宏力半導(dǎo)體制造有限公司上海宏力半導(dǎo)體制造有限公司Grace Semiconductor Manufacturing Corporation2. Field Device上海宏力半導(dǎo)體制造有限公司上海宏力半導(dǎo)體制造有限公司Grace

8、 Semiconductor Manufacturing CorporationWAT Item Name(以Poly Nfield為例) : VtNfpS (field Vt)IleakNfpSVptNfpS (punchthrough Vt)Item nameVtIleakVptMethod of measurementVd=1.1Vdd, sweep Vg from 0V to Vgstop(3Vdd),measure Id, Vt=VgId=10nA/umVg=Vd=1.1Vdd, measure Id, Ileak=Id/WidthVg=1.1Vdd, sweep Vd from 0

9、V to Vdstop(3Vdd),measure Id, Vpt=VdId=10nA/um上海宏力半導(dǎo)體制造有限公司上海宏力半導(dǎo)體制造有限公司Grace Semiconductor Manufacturing Corporation3. Junction上海宏力半導(dǎo)體制造有限公司上海宏力半導(dǎo)體制造有限公司Grace Semiconductor Manufacturing CorporationWAT Item Name (以N+/PW junction為例) : CNjIleakNjBvNjItem nameCjIleakBvMethod of measurementVg=0V, Vb=GN

10、D, apply a 0.03V AC signal to measure C value, Cj=C/AreaVg=1.1Vdd, measure Ig, Ileak=Ig/AreaVb=0, sweep Vg from 0V to Vgstop(3Vdd), measure Ig, Bv=VgIg=100pA/um2上海宏力半導(dǎo)體制造有限公司上海宏力半導(dǎo)體制造有限公司Grace Semiconductor Manufacturing Corporation4. Gate Oxide上海宏力半導(dǎo)體制造有限公司上海宏力半導(dǎo)體制造有限公司Grace Semiconductor Manufactu

11、ring CorporationWAT Item Name(以PW gate oxide為例) : Cgpw ToxpwBvCgpwItem nameCoxMethod of measurementVg=Vdd, Vb=GND, apply a 0.03V AC signal to measure C value, Cox=C/AreaVg=GND, Vb=Vdd, apply a 0.03V AC signal to measure Cox value, Tox=( o*ox *Area)/CoxVb=0, sweep Vg from 0V to Vgstop(3Vdd), measure

12、Ig, Bv=VgIg=100pA/um2ToxBvNOTE: If there has a dummy capacitor, Cdummy should be subtracted.(Cox=Cox-Cdummy)上海宏力半導(dǎo)體制造有限公司上海宏力半導(dǎo)體制造有限公司Grace Semiconductor Manufacturing Corporation5. Resistor上海宏力半導(dǎo)體制造有限公司上海宏力半導(dǎo)體制造有限公司Grace Semiconductor Manufacturing CorporationSheet resistance (RsN+/P+/NW/Poly/Metal

13、)Item nameRsMethod of measurementVh=1V, measure Ih, Rs=(Vh/Ih)/Sqr上海宏力半導(dǎo)體制造有限公司上海宏力半導(dǎo)體制造有限公司Grace Semiconductor Manufacturing CorporationContact Resistance (RcN+/P+/Via)PadM1PadN+N+P WellN+Item nameRcMethod of measurementVh=1V, Vl=GND, measure Ih, Rs=(Vh/Ih)-(Rsn*Wn/Ln+Rsm*Wm/Lm)*1/2*Ncon)/NconNote:

14、 Rc need to subtract active & Metal resistor, RsMetal can be ignored due to metal resistor is very small.上海宏力半導(dǎo)體制造有限公司上海宏力半導(dǎo)體制造有限公司Grace Semiconductor Manufacturing Corporation6. Bipolar Device上海宏力半導(dǎo)體制造有限公司上海宏力半導(dǎo)體制造有限公司Grace Semiconductor Manufacturing CorporationBPadEPadM1CPadWAT Item Name(以NPN為例):

15、HfeNpnBvNpnSTIN+STIP+STIP+STIN WellPsubItem nameHfeBvMethod of measurementIb=1uA, Vce=Vdd, Hfe=Ic/IbBase floating, Sweep Vce from 0V to Vcestop(3Vdd), measure Ic, Bv=VceIc=1uA上海宏力半導(dǎo)體制造有限公司上海宏力半導(dǎo)體制造有限公司Grace Semiconductor Manufacturing Corporation7. Layout Rule Check上海宏力半導(dǎo)體制造有限公司上海宏力半導(dǎo)體制造有限公司Grace Semiconductor Manufacturing CorporationNW/N+ Poly/N+ active/Metal bridgePADWAT Item Name(以NW bridge為