2023/7/22前工藝部分設備簡介Reporter:劉伯偉Date:24/3/200912023/7/22內容簡介一、ICP感應耦合等離子刻蝕設備簡介二、E-beam電子束蒸發臺設備簡介

ITO制程BondingPN-pad制程三、PECVD等離子化學氣相沉積設備2ICPSystemplanformICPMatchingnetworkLoad-lockRFGeneratorICPGeneratorElectronicControlTMPControlICPReactorHT/BTPowerSupplies2023/7/223ICPSystemsideviewTMPThrottleValveMatchingNetworkLiftICPReactorICPMatchingnetworkGasboxLoad-lockLoad-lockValve2023/7/224HighRatePumpingSystemTMP(900l/s)TVReactorDryPumpADP122(95m3/h)Load-LockValveLoad-lockGatevalveforquickreactorventingandcleaning2023/7/225ICPReactorDesignMatchBoxReactorLaserwindow2023/7/226ICPReactorDesignMatchBox280mmdia.coilLaserwindowGasshower(Thermallyisolated)Quartztube2023/7/227ICPReactorDesignWatercooledcoilQuartztube(Thermallyisolated)Shielding(Thermallyisolated)Thereactorwallsarethermallyisolated.Theyaregettinghotduringplasmaetching.Thisstronglyreducesthepolymercondensationandthecrosscontaminationbetweendifferentprocesses.2023/7/228ShuttleLoadingCathodeLoadingtoolShuttle2023/7/229CathodeUpLoadingtoolCathodeShuttle2023/7/2210ClampingLoadingtoolCathodeShuttle2023/7/2211Pumpingdownto8×10-5

TorrLoadingtoolCathodeShuttleHelium2023/7/2212DryEtchingLoadingtoolCathodeShuttleHeliumPLASMACoolantINCoolantOUTPlasmaheatswaferandclampingtool.HeatistransferredtoshuttleandtothecooledcathodebyHeatapressureabove5Torrs.2023/7/2213Electrondensity:1011to1012e/cm3HighDensityPlasmameansveryfastetchratesIonEnhancedGaNetchingrequires:

Ionbombardment+chlorinebasedchemistryAnisotropicIonEnhancedEtchingPhysicalandchemicalcomponentsindividuallyslowNeedbothionsandreactivespeciespresentIonsstrikingsurfaceenhancereactionsandproductdesorptionAllows“fast”anisotropicetchingProductIonNeutral2023/7/2214EndofDryEtchingLoadingtoolCathodeShuttle2023/7/2215CathodeDownCathodeLoadingtoolShuttle2023/7/2216ArminLoad-lockLoadingtoolShuttleCathode2023/7/2217EtchingResultsversusShuttleDesignAluminumShuttleAlShuttleQuartzAlShuttleQuartzExperimentalconditions:PositiveslopeNegativeslopeVertical2023/7/2218GaNETCHINGRESULTSICPetchingofGaN2023/7/2219EtchRateversusICPPoweretchrateincreaseslinearlywithICPpower200100600WEtchRate(nm/min)800W1000W2023/7/2220NewInductivelyCoupledPlasmasourcewithhotwallswhich

reducespolymercondensation,enhancesplasmacleaning,minimizescrosscontamination.ItproducesHighDensityPlasmaforuniformetchingoffilmsonbatchofseven2”wafersorwafersizeupto200mm,Lowplasmapotential(<25Volts)andautomaticselfbiasregulationtopreciselycontroltheionenergy,Softmechanicalclampingandheliumassistedheatexchange

betweencooledcathode,shuttleandwafertoavoidresist

and

devicedamage,Shuttlesdedicatedtoeachprocesstoreducecrosscontamination.Theyaredesignedtofitwithwafersizeandprocessesrecipesforthe

bestprocessresults,Fastpumpingandhighetchratesforhighthroughput,Features2023/7/22212023/7/22電子束蒸發臺設備簡介工作原理：電子束蒸鍍法是利用電子槍所射出的電子束轟擊待鍍材料，將高能電子射束的動能轉化為熔化待鍍材料的熱能，使其局部熔化。因在高真空下（4×10-6

torr）金屬源的熔點與沸點接近，容易使其蒸發，而產生的金屬蒸氣流遇到晶片時即沉積在上面。理論基礎飽和蒸氣壓：在一定溫度、壓力下，設純液體與其蒸氣平衡共存，即兩相的量長時間保持不變，通常稱此時平衡蒸氣的壓力為該液體在此溫度下的飽和蒸氣壓。沸騰：當液體飽和蒸氣壓與外壓相等時，液體不僅可以從表面氣化，它的內部也可氣化形成氣泡而不斷冒出，這種現象叫做沸騰。沸騰時的溫度，即液體的蒸氣壓等于外壓時的溫度叫做沸點。同一液體在不同外壓下，有不同的沸點。如增大外壓，則其蒸氣壓等于外壓所須的溫度（即沸點）必升高；如降低外壓，則沸點降低。222023/7/22真空鍍膜原理示意圖232023/7/2224鍍膜參數設定和系統值設定2023/7/2225自動鍍膜操作E-Beam簡介機臺名稱蒸鍍金屬加熱方式E-Beam(氧化物）SiO2、ITOE-GunE-BeamAu、Ni、Ti、AgCr、AL、PtE-Gun2023/7/2226機臺功用及蒸鍍金屬一覽表2023/7/22BatchtypeevaporationsystemE-BeamCoaterITOProcess272023/7/22ABCA：1100A

B：400A

C：800A不同厚度ITO試驗穿透率一282023/7/22A：ITO厚度2500AB：ITO厚度5000AC：ITO厚度7500AD：ITO厚度10000AE：ITO厚度12500ADCBEA不同厚度ITO試驗穿透率二292023/7/22BatchtypeevaporationsystemE-BeamCoaterLiftOffProcess302023/7/22Lift-offProcessR680E-GunRevolutiondomeShutterCr/Pt/AuPRCrosssectionimageoflift-offdepositionfilm.31KeyFeatureoflift-offprocesstechnology.1.Angleofincidentofevaporationmaterialisverticaltowardsubstrate.2.Temperatureofdepositioncanbekeptbelowallowabletemperatureforphoto-resist.Lift-offdeposition：VerticalangleofincidentPatentedPlasmaBox?ComponentsCameraPlasmaBoxRFFeedthroughProcessGasesHeaterVacuumUniquepatenteddesign:Independentlypumped,heatedvacuumchamberwithinseparatevacuumvesselDualindependentpumpingsystemspreventscontaminationofthedepositedlayers2023/7/2232IdentifyingDepositionProcessGoalsHighBreakdownStrengthStressPinHoleFreeSurfacesStepCoverageDamageUniformThicknessUniformIndexDepositionRatesRobustProcessReproducibilityLowparticulatesMinimalcleancyclesThroughputMatchingprocesses,goals,andsystemsisnecessary2023/7/2233GasinjectionRFinjectionProcesspumpingWaferHIGHPRESSUREPLASMAVacuumpumpingHOTCOLDOugassingImpuritiesLOWPRESSUREVACUUMPLASMABOXDESIGNISUNIQUETOMAINTAINHIGHPURITYOFDEPOSITIONandexcellentrepeatabilityPECVDDeposition:PlasmaBoxConceptPressureofPlasmaremainshigher(x100)than VacuumChamberPlasmaboxreactorinaluminumbasedmaterialandHOT2023/7/2234TMPRP1RP2ProcessGasesRFPowerLaserEPDPlasmaBoxTechnologyPlasmaconfinedinauniformlyheatedreactorExcellentthicknessandrefractiveindexuniformityGoodcontroloftheparticlecontamination2023/7/2235PlasmaBox?UniqueOperationP1

<<P2TMPP1P2RotaryPumpCleaningGasesN2P1

>>P2TMPP1P2ProcessGasesRotaryPumpDepositionModeP1>>P2preventsout-gassingfromcoldchamberwallsResult:Ultrapurefilmswithoutusingaload-lockCleaningModeP1<<P2keepsFatomsinsidePlasmaBox?Result:Nocorrosiontohotreactorparts2023/7/2236LowTemperaturePECVDDepositionLowtemperaturepassivationSiO2orSiNxwhenrequiredduetodevicelimitationse.g.MagneticmaterialsDepositionat100~300°Ce.g.Onresistfortri-levelprocesses2023/7/2237物理氣相生長模式化學氣相生長模式PECVD淀積示意圖baa/b=60%StepCoverageofLowTemperatureDeposited1800Athick2023/7/2239ETCHCLEANISPERFORMEDINBETWEENEACHDEPOSITION…CHAMBERCONDITIONREMAINSIDENTICALFROMWAFERTOWAFERPLASMABOXDATA,PLASMABOXDATA,HighRepeatability2023/7/2240ETCHCLEANISPERFORMEDINBETWEENEACHDEPOSITION…CHAMBERCONDITIONREMAINSIDENTICALFROMWAFERTOWAFERPLASMABOXDATA,PLASMABOX4003002001000-100-200-300-400010