1、半導(dǎo)體光電子學(xué)的新進(jìn)展Recent Progress on Semiconductor BasedOpto-electronic Devices羅 毅 Yi LUO 集成光電子國家重點實驗室清華大學(xué) 電子工程系State Key Lab on Integrated OptoelectronicsDept. of Electronic Engineering, Tsinghua University2022/9/41BackgroundThe Demand for More BandwidthInternet, multimedia communications, and etc Methods

2、 to Increase System CapacityWDM (Wavelength-Division Multiplexing) OTDM (Optical Time-Division Multiplexing)Benefits of WDM techniquesFlexibility and scalability for a variety of network architecturesWDM techniques are the backbone of modern optical fiber networks2022/9/42State Key Lab on Integrated

3、 Optoelectronics2022/9/43State Key Lab on Integrated Optoelectronics2022/9/44State Key Lab on Integrated OptoelectronicsKey Devices for WDM Optical Fiber Network SystemsLight SourcesLow-cost uncooled LDsDirectly modulated LDsModulator integrated DFB LDsWavelength tunable/selectable LDsHigh-Speed Pho

4、todetectorsSOA and Wavelength ConverterAWG and Related2022/9/45State Key Lab on Integrated Optoelectronics2022/9/46State Key Lab on Integrated OptoelectronicsLow-Cost Uncooled LDsApplicationsAccess networkMetropolitan transmissionBit rate: 155 MB/s (FP-LDs) 10 Gb/s (DFB-LDs)Requirements Wide tempera

5、ture range operation Cost-effective structure for device fabrication High efficiency and large tolerance for coupling output light into a single mode fiber2022/9/47State Key Lab on Integrated OptoelectronicsUncooled Gain-Coupled DFB LDsStable single mode operation from - 40 to 85C Integrated beam-ex

6、pander for improved coupling tolerance Gain-coupled DFB lasers with current-blocking gratings 2022/9/48State Key Lab on Integrated OptoelectronicsDirectly Modulated DFB LDsApplicationsGigabit EthernetMetropolitan transmissionBit rate: up to 10 Gb/sWavelength: 1.3 m & 1.55 mLimitationsLimited transmi

7、ssion span ( 4) Modulation speed is limited by carrier relaxation oscillation 2022/9/49State Key Lab on Integrated Optoelectronics10 Gb/s Directly Modulated DFB LDs for Metropolitan Data TransmissionSmall-signal RF ResponseBER Characteristics2022/9/410State Key Lab on Integrated OptoelectronicsEA Mo

8、dulator Integrated DFB LDsApplicationsTrunk line transmissionBit rate: 2.5 Gb/s 40 Gb/sAdvantagesCompact size Low coupling lossLow frequency chirpingReduced costImproved reliability2022/9/411State Key Lab on Integrated Optoelectronics10 Gb/s EA Modulator Integrated DFB LDs for Trunk Line Communicati

9、onsTransmission length: 100 kmFeature: Low power penalty (1.5 dB) & Wide bandwidth (14 GHz) 2022/9/412State Key Lab on Integrated Optoelectronics10 Gb/s EA Modulator Integrated DFB LDsEye DiagramBER Performance2022/9/413State Key Lab on Integrated OptoelectronicsWavelength Tunable/Selectable LDsAdva

10、ntagesAbility to restore failed channelsReduced transmitter costIncreased flexibility for future network managingWavelength Tunable vs. Wavelength Selectable Wavelength Tunable LDs:Based on DBR structures Compact device structure Poor reliability & Electric crosstalk at high frequency Wavelength Sel

11、ectable LDs: Based on DFB LD arrays Relatively complicated device structure Improved reliability and wavelength stability2022/9/414State Key Lab on Integrated OptoelectronicsMulti-range Wavelength Selectable LDsFor use in back-up & add-drop in DWDM photonic networkDFB-LDs integrated with MMI coupler

12、, SOA, and EA modulatorCompact size (400 m 2840 m)2022/9/415State Key Lab on Integrated OptoelectronicsMulti-Range Wavelength Selectable LD Arrays for DWDM Systems15 nm/chip wavelength selectable rangeWavelength & Threshold currentLasing Spectra2022/9/416State Key Lab on Integrated OptoelectronicsHi

13、gh-Speed PhotodetectorsConventional ConfigurationsSurface illuminated p-i-n photodetector Avalanche photodetector (APD)Limitations Limited bandwidth for APD detectorsTrade-off between bandwidth and efficiency for surface illuminated p-i-n detectorsCurrent TrendSide illuminated structure Waveguide p-i-n photodiodes2022/9/417State Key Lab on Integrated OptoelectronicsWideband Waveguide Photodiodefor 40 Gb/s SystemsMonolithic receiver composed of multimode waveguide p-i-n photodiode and a HEMT d