1、2013 SID 文獻閱讀報告冷傳利2014.1.16文獻目錄18.1 Invited Paper:Roll-To-Roll Manufacturing of Printed OLEDs18.3 Flexible Barrier Technology for Enabling Rollable AMOLED Displays and Upscaling Flexible OLED Lighting70.2 Late-News Paper:14.7 Active Matrix PHOLED Displays on Temporary Bonded PEN Substrates with Low

2、Temperature IGZO TFTs33.1 Late News Paper:High Resolution 4.4 AMOLED Display with 413 ppi Real Pixel Density33.3 Late News Paper:Optimizing Nanostructures to Enhance Optical Outcoupling of OLED Microdisplays16.2 A 4.8-inch AMOLED Display Panel Driven by Stable Amorphous In-Zn-O Thin-Film Transistor3

3、5.1 High Resolution AMOLED Pixel Using Negative Feedback Structure for Improving Image Quality35.3 A 10-Bit Linear R-string DAC Architecture for Mobile Full-HD AMOLED Driver ICs18.1 Invited Paper:Roll-To-Roll Manufacturing of Printed OLEDsOLED component is based on polymer materials which can be for

4、mulated using a printing techniquehigh volume and high speed processing bring cost advantageslow temperature processingcomponents are light weight and easy to integrate into various productsfreedom of designefficiency and lifetimeITO-PET R2R etching process.（HTL/OLED）gravure printing process凹版印刷(EIL

5、/cathode electrode)rotary screen printed圓網印刷The barrier film is sealed and laminated using a pressure sensitive adhesive18.1 Invited Paper:Roll-To-Roll Manufacturing of Printed OLEDsSmart cardsAn electronic voting card35 cm2 sized printed OLED lighting element18.3 Flexible Barrier Technology for Ena

6、bling Rollable AMOLED Displays and Upscaling Flexible OLED Lightingmetal or glass coverlid isnt flexible and is expensive up to 50% of the cost of the finished systema low-cost, flexible, thin film based barrier technology which offer sufficient environmental protectionlow-temperature PECVD SiNx fil

7、ms as intrinsic moisture barrier stacked with organic planarization layerSheet-to-Sheet Thin Film Encapsulation/Barrier Stack for Glass based OLEDs and Flexible OLEDs and Flexible AMOLED DisplaysUpscaling to Roll-to-Roll Barrier18.3 Flexible Barrier Technology for Enabling Rollable AMOLED Displays a

8、nd Upscaling Flexible OLED LightingTo truly enable manufacturing of flexible AMOLED display products, a reliable flexible high performance barrier is crucial.25 m PEN foil substratea low-temperature a-IGZO TFT Backplaneinkjet printed white OLEDThe active layers are sandwiched between two Holsts barr

9、ier stacks for top and bottom encapsulation60C/90%RH for 500 hours showed no severe degradation in display qualityDynamic rollability tests for over 3000 times show no additional failures,70.2 Late-News Paper:14.7 Active Matrix PHOLED Displays on Temporary Bonded PEN Substrates with Low Temperature

10、IGZO TFTsLow temperature (below 200) IGZO process in Gen II line (14.7)The PEN substrate were bonded to a rigid carrier.300nm SiNx as barrier coatingInverted staggered gate with etch stopper structuredual active layer to improve forward bias stability(The use of a duallayer architecture allows indep

11、endent control of mobility and threshold voltage)70.2 Late-News Paper:14.7 Active Matrix PHOLED Displays on Temporary Bonded PEN Substrates with Low Temperature IGZO TFTsA fine feature shadow mask was used to define red, green and blue.Blue is sky blue and has relatively higher driving voltage than

12、red and green colors.33.1 Late News Paper:High Resolution 4.4 AMOLED Display with 413 ppi Real Pixel Densityfine metal mask (FMM) (difficult to obtain high-resolution)white OLED (WOLED) with color filter (higher power consumption and less color purity)Cavity WOLED with color filter (enhance the colo

13、r saturation and improve the device efficiency; comparable performance with side-by-side AMOLED, improved production yield, throughput, and even cost.)AU Optronics CorporationThe transparent conductive layer was used to adjust the optical length of cavity 6.33.1 Late News Paper:High Resolution 4.4 A

14、MOLED Display with 413 ppi Real Pixel DensityIn order to reduce the panel reflection and thus improve the contrast, a polarizer is applied (reduces the panel efficiency by 50-60%).cavity OLED possesses low reflectivity around emission peakIn the same time, color filter can only transmits a small ran

15、ge of light around emission peak while absorbing all others. Thus for an external light, if the light wavelength is around the cavity emission peak, it would pass the color filter but experience low reflection inside the cavity, resulting in low reflection;33.3 Late News Paper:Optimizing Nanostructu

16、res to Enhance Optical Outcoupling of OLED Microdisplayslow power consumption for mobile applications.Although internal quantum efficiency of 100%; Around 80% of the generated light is confined inside the organic layers due to total internal reflection and surface-plasmon-excitation and ultimately l

17、ost by absorption The grating consists of a low refractive index material (light blue) i.e. SiO2 and a conductive high index material (dark blue) i.e. doped amorphous silicon. 33.3 Late News Paper:Optimizing Nanostructures to Enhance Optical Outcoupling of OLED MicrodisplaysOptimization of Grating P

18、arameters16.2 A 4.8-inch AMOLED Display Panel Driven by Stable Amorphous In-Zn-O Thin-Film TransistorPECVD-SiO2 (most widely used gate dielectric) low dielectric constant (3.9)SiNx has high hydrogen which would strongly affect the properties of the AOS-TFTsAnodized Al2O3: high dielectric constant, l

19、ow leakage current density, low process temperature and low cost.In-Zn-O doped with Rare-earth-elements (R-IZO). This kind of TFTs showed high mobility, low threshold voltage, and good electrical stability under gate bias stress.A 4.8-inch full-color AMOLED display driven by this kind of TFT was dem

20、onstrated.華南理工&廣州新視界16.2 A 4.8-inch AMOLED Display Panel Driven by Stable Amorphous In-Zn-O Thin-Film Transistor300-nm-thick Al wet-etchanodizedR-IZO RFMo-Al-Moanneal 350 0.5hITO layeruFE 20 cm2/Vs Vth0V SS0.2v /decade16.2 A 4.8-inch AMOLED Display Panel Driven by Stable Amorphous In-Zn-O Thin-Film

21、TransistorGenerally, the positive shift of Vth is originated from electron traps at the interface between the gate insulator and the oxide films or/and at the interface between the oxide and the passivation films 13, while the negative shift of Vth is due to positive charge traps at the upper interfaces35.1 High Resolution AMOLED Pixel Using Negative Feedback Structure for Improvin