1、實驗二十三：高溫超導材料的特性測試和低溫溫度計2016.12.29一、實驗數據記錄1. 室溫檢測：表 1.室溫檢測數據表鉑電阻電壓（ mV）109.03鉑電阻電流 (mA)100.30Si 半導體電阻電壓（V）0.5155Si 半導體電阻電流（A）100.00樣品電壓（ mV）0.162樣品電流（ mA）10.0165溫差電偶電阻0.0002. 低溫溫度計對比數據及超導轉變曲線數據：見下表降溫U-pt/mVU-Si/V溫差電偶 /mV樣品電壓 /mVT/K樣品電阻105.000.54175.5700.148283.150.0148104.000.54805.4770.146280.700.01

2、46103.000.55455.3820.144278.250.0144102.000.56105.2880.143275.800.0143101.000.56745.1950.142273.350.0142100.000.57405.1010.141270.900.014199.000.58035.0110.140268.440.014098.000.58704.9210.139265.990.013997.000.59404.8290.138263.540.013896.000.00004.7420.137261.090.013795.000.60644.6490.136258.640.0

3、13694.000.61314.5640.135256.190.013593.000.61954.4800.133253.730.013392.000.62654.3890.132251.280.013291.000.63304.3040.131248.830.013190.000.63944.2200.130246.380.013089.000.64654.1340.128243.930.012888.000.65304.0470.127241.480.012787.000.66003.9660.126239.030.012686.000.66683.8810.125236.570.0125

4、85.000.67363.7970.123234.120.012384.000.68073.7170.122231.670.012283.000.68763.6340.121229.220.012182.000.69433.5540.120226.770.012081.000.70103.4740.119224.320.011980.000.70753.3960.118221.860.011879.000.71433.3200.116219.410.011678.000.72113.2430.115216.960.011577.000.72763.1710.114214.510.011476.

5、000.73463.0940.113212.060.011375.000.74103.0200.112209.610.011274.000.74782.9460.110207.150.011073.000.75452.8740.109204.700.010972.000.76072.8080.108202.250.010871.000.76602.7480.107199.800.010770.000.77272.6770.105197.350.010569.000.77942.6070.104194.900.010468.000.78602.5340.103192.440.010367.000

6、.79282.4630.102189.990.010266.000.79982.3900.100187.540.010065.000.00002.3180.099185.090.009964.000.81302.2420.098182.640.009863.000.81922.1760.097180.190.009762.000.82372.1300.096177.740.009661.000.82902.0760.095175.280.009560.000.00002.0220.094172.830.009459.000.00001.9600.093170.380.009358.000.85

7、031.9290.092167.930.009257.000.85671.8650.091165.480.009156.000.86211.8020.090163.030.009055.000.86801.7510.088160.570.008854.000.87481.6950.086158.120.008653.000.88151.6230.085155.670.008552.000.88821.5580.084153.220.008451.000.89491.4900.083150.770.008350.000.90191.4290.081148.320.008149.000.90951

8、.3590.080145.860.008048.000.91571.2980.079143.410.007947.000.92191.2450.078140.960.007846.000.92761.1910.077138.510.007745.000.93341.1360.076136.060.007644.000.93901.0840.075133.610.007543.000.94471.0320.074131.150.007442.000.95090.9850.073128.700.007341.000.95660.9290.072126.250.007240.000.96220.87

9、70.071123.800.007139.000.96550.8320.070121.350.007038.000.97130.8020.069118.900.006937.000.97660.7530.068116.450.006836.000.98200.7080.067113.990.006735.000.98710.6630.065111.540.006534.000.99200.6210.064109.090.006433.000.99990.5340.063106.640.006332.001.00930.4570.062104.190.006231.001.01350.4080.

10、059101.740.005930.001.01960.3620.05599.280.005528.711.02710.05196.120.005128.651.0275.0.04895.970.004828.611.02780.04695.880.004628.561.02880.04295.750.004228.551.02810.04095.730.004028.531.02830.03795.680.003728.511.02820.03495.630.003428.501.02830.03195.610.003128.491.02850.02495.580.002428.481.02

11、850.02095.560.002028.481.02850.01695.560.001628.461.02860.01395.510.001328.461.02860.01095.510.001028.451.02870.00895.480.000828.441.02870.00595.460.000528.431.02870.00395.430.000328.411.02880.00195.390.000128.391.02890.00095.340.00003. 液氮沸點監測數據：表 2：液氮沸點監測數據鉑電阻電壓（ mV）20.36鉑電阻電流 (mA)99.84Si 半導體電阻電壓（V

12、）1.0713Si 半導體電阻電流（A100.01）樣品電壓（ mV）0.000樣品電流（ mA）10.0173溫差電偶電阻0.000二、實驗數據分析、處理和結論1. 處理室溫檢測數據，給出三部分測量電路的電流、室溫、室溫下的超導樣品的電阻：（ 1 ） 電流：鉑電阻： 109.03mA Si 半導體電阻： 100.00 A 樣品電流： 10.0165mA（ 2） 室溫：(3) 室溫下，樣品的電阻：R=0.162/10.0165=0.01622. 處理低溫溫度計對比數據，作圖給出對比結果，總結三種溫度計的特點：圖 1： Si 電壓 - 溫度曲線Y=-0.0026x+1.2798 R2= 0.99

13、94圖 2：溫差電偶電壓- 溫度曲線線性擬合： Y=0.0279x-2.6711 R2=0.99022非線性擬合： Y=0.000057x +0.0061x-0.75127 R=0.9998結論：由圖1： Si 半導體電壓隨著溫度呈線性相關，且是負相關。由圖 2：溫差電偶與溫度成正相關，在擬合過程中發現，二次擬合要比一次的擬合精確的多。 因此溫差電偶電壓應該與溫度成二次關系。 比較兩圖一直， Si 半導體的溫敏線性較好，成的是線性關系，溫差電偶電壓與溫度成二次關系，鉑電阻 R 與 T 成線性關系。3. 作圖并用最小二乘法處理超導樣品測量數據，給出轉變溫度。圖 3：樣品電阻 - 溫度曲線圖 4：

14、樣品電阻 - 溫度電壓（最小二乘法）Y=0.000048x+0.00109R-Square=0.9994結論：由圖3、4 可知：隨著溫度下降，R 首先以直線下降，在到達一定的溫度時，斜率發生突變的點為轉變溫度。對于高溫時的數據進行線性擬合，其近似一條直線。通過對于突變處的觀察，突變溫度約為103K。4. 處理液氮沸點檢測數據，給出液氮沸點，液氮溫度下超導樣品的電阻、三部分測量電路的電流，與溫室數據對比，評測系統的精確度和穩定性。液氮的沸點77.60K超導樣品電阻0.000 Pt 電阻電流99.84mASi 半導體電流100.01 A超導樣品電流10.0165mAPt 的電阻精確到： 0.01mV 0.01mASi半導體電阻精確到：0.0001V 0.01*10-6A超導樣品精確到：0.001Mv 0.0001Ma溫差電偶溫度計精確到：0.001Mv鉑 U 最小 28.39mV ,I最小為 99.84mA ，絕對誤差為0.04% 和 0.01%硅電壓最?。?0.5155mV 電流： 100.01*10-6A，絕對誤差為0.02% 和 0.01%樣品的電流最小為10.01