1、Ingot-Acylindricalsolidmadeofpolycrystallineorsinglecrystalsiliconfromwhichwafersarecut.晶錠-由多晶或單晶形成的柱體，晶圓片由此切割而成。12/7LaserLight-ScatteringEvent-Asignalpulsethatlocatessurfaceimperfectionsonawafer.激光散射-由晶片表面缺陷引起的脈沖信號。Lay-Themaindirectionofsurfacetextureonawafer.層-晶圓片表面結構的主要方向。LightPointDefect(LPD)(No

2、tpreferred;seelocalizedlight-scatterer)光點缺陷(LPD)(不推薦使用，參見“局部光散射”)Lithography-Theprocessusedtotransferpatternsontowafers.光亥J-從掩膜至圓片轉移的過程。LocalizedLight-Scatterer-Onefeatureonthesurfaceofawafer,suchasapitorascratchthatscatterslight.Itisalsocalledalightpointdefect.局部光散射晶圓片表面特征，例如小坑或擦傷導致光線散射，也稱為光點缺陷。Lot

3、-Wafersofsimilarsizesandcharacteristicsplacedtogetherinashipment.批次具有相似尺寸和特性的晶圓片一并放置在一個載片器內。MajorityCarrier-Acarrier,eitheraholeoranelectronthatisdominantinaspecificregion,suchaselectronsinanN-Typearea.多數載流子一種載流子，在半導體材料中起支配作用的空穴或電子，例如在N型中是電子。MechanicalTestWafer-Asiliconwaferusedfortestingpurposes.機械

4、測試晶用于測試的晶圓片。Microroughness-Surfaceroughnesswithspacingbetweentheimpuritieswithameasurementoflessthan100pm.微粗糙-小于100微米的表面粗糙部分。MillerIndices,ofaCrystallographicPlane-Asystemthatutilizesthreenumberstoidentifyplanorientationinacrystal.Miller索指數三個整數，用于確定某個并行面。這些整數是來自相同系統的基本向量。MinimalConditionsorDimension

5、s-Theallowableconditionsfordeterminingwhetherornotawaferisconsideredacceptable.最小條件或方向-確定晶圓片是否合格的允許條件。MinorityCarrier-Acarrier,eitheraholeoranelectronthatisnotdominantinaspecificregion,suchaselectronsinaP-Typearea.少數載流子-在半導體材料中不起支配作用的移動電荷，在P型中是電子，在N型中是空穴。Mound-Araiseddefectonthesurfaceofawafermeasur

6、ingmorethan0.25mm.堆垛晶圓片表面超過025毫米的缺陷。Notch-Anindentontheedgeofawaferusedfororientationpurposes.凹槽晶圓片邊緣上用于晶向定位的小凹槽。OrangePeel-Aroughenedsurfacethatisvisibletotheunaidedeye.桔皮-可以用肉眼看到的粗糙表面OrthogonalMisorientation-直角定向誤差-Particle-Asmallpieceofmaterialfoundonawaferthatisnotconnectedwithit.顆粒-晶片上的細小物質。Par

7、ticleCounting-Wafersthatareusedtotesttoolsforparticlecontamination.顆粒計算用來測試晶圓片顆粒污染的測試工具。ParticulateContamination-Particlesfoundonthesurfaceofawafer.Theyappearasbrightpointswhenacollineatedlightisshinedonthewafer.顆粒污染片表面的顆粒Pit-Anon-removableimperfectionfoundonthesurfaceofawafer.深坑-種1晶片表面無法消除的缺陷。Point

8、Defect-Acrystaldefectthatisanimpurity,suchasalatticevacancyoraninterstitialatom.點缺陷不純凈的晶缺陷，例如格子空缺或原子空隙。PreferentialEtch-優先蝕刻PremiumWafer-Awaferthatcanbeusedforparticlecounting,measuringpatternresolutioninthephotolithographyprocess,andmetalcontaminationmonitoring.Thiswaferhasverystrictspecificationsf

9、oraspecificusage,butlooserspecificationsthantheprimewafer.測試晶圓片-影印過程中用于顆粒計算、測量溶解度和檢測金屬污染的晶于具體應用該晶片有嚴格的要求，但是要比主晶片要求寬松些。PrimaryOrientationFlat-Thelongestflatfoundonthewafer.主定位邊-晶圓片上最長的定位邊。ProcessTestWafer-Awaferthatcanbeusedforprocessesaswellasareacleanliness.加工測試晶-用于區域清潔過程中的晶圓片。Profilometer-Atooltha

10、tisusedformeasuringsurfacetopography.表面形貌齊U-種用來測量晶片表面形貌的工具。Resistivity(Electrical)-Theamountofdifficultythatchargedcarriershaveinmovingthroughoutmaterial.電阻率(電學方面)-材料反抗或對抗電荷在其中通過的一種物理特性。Required-Theminimumspecificationsneededbythecustomerwhenorderingwafers.必需-訂購晶圓片時客戶必須達到的最小規格。Roughness-Thetexturefo

11、undonthesurfaceofthewaferthatisspacedverycloselytogether.粗糙度片表面間隙很小的紋理SawMarks-Surfaceirregularities鋸痕-表面不規則。ScanDirection-Intheflatnesscalculation,thedirectionofthesubsites.掃描方向-平整度測量中，局部平面的方向。ScannerSiteFlatness-局部平整度掃描儀-片表面的痕跡。Scratch-Amarkthatisfoundonthewafersurface.擦傷-晶SecondaryFlat-Aflatthati

12、ssmallerthantheprimaryorientationflat.Thepositionofthisflatdetermineswhattypethewaferis,andalsotheorientationofthewafer.片的類型和晶向。第二定位邊比主定位邊小的定位邊，它的位置決定了晶Shape-開鄉狀Site-Anareaonthefrontsurfaceofthewaferthathassidesparallelandperpendiculartotheprimaryorientationflat.(Thisareaisrectangularinshape)局部表面-晶圓

13、片前面上平行或垂直于主定位邊方向的區域。SiteArray-aneighboringsetofsites局部表面系列一系列的相關局部表面。SiteFlatness-局音R平整-Slip-Adefectpatternofsmallridgesfoundonthesurfaceofthewafer.劃傷晶圓片表面上的小皺造成的缺陷。Smudge-Adefectorcontaminationfoundonthewafercausedbyfingerprints.污跡晶片上指紋造成的缺陷或污染。Sori-Striation-Defectsorcontaminationsfoundintheshapeo

14、fahelix.條痕-螺紋上的缺陷或污染。Subsite,ofaSite-Anareafoundwithinthesite,alsorectangular.Thecenterofthesubsitemustbelocatedwithintheoriginalsite.局部子表面-局部表面內的區域，也是矩形的。子站中心必須位于原始站點內部。SurfaceTexture-Variationsfoundontherealsurfaceofthewaferthatdeviatefromthereferencesurface.表面紋理晶圓片實際面與參考面的差異情況。TestWafer-Asiliconw

15、aferthatisusedinmanufacturingformonitoringandtestingpurposes.測試晶圓片-用于生產中監測和測試的晶圓片。ThicknessofTopSiliconFilm-Thedistancefoundbetweenthefaceofthetopsiliconfilmandthesurfaceoftheoxidelayer.頂部硅膜厚度-頂部硅層表面和氧化層表面間的距離。TopSiliconFilm-Thelayerofsilicononwhichsemiconductordevicesareplaced.Thisislocatedontopoft

16、heinsulatinglayer.頂部硅膜-生產半導體電路的硅層，位于絕緣層頂部。TotalIndicatorReading(TIR)-Thesmallestdistancebetweenplanesonthesurfaceofthewafer.總計指示劑數(TIR)-晶圓片表面位面間的最短距離。VirginTestWafer-Awaferthathasnotbeenusedinmanufacturingorotherprocesses.原始測試晶片還沒有用于生產或其他流程中的晶圓片。Void-Thelackofanysortofbond(particularlyachemicalbond)

17、atthesiteofbonding.無效-在應該綁定的地方沒有綁定(特別是化學綁定)。Waves-Curvesandcontoursfoundonthesurfaceofthewaferthatcanbeseenbythenakedeye.波浪片表面通過肉眼能發現的彎曲和曲線。Waviness-Widelyspacedimperfectionsonthesurfaceofawafer.波紋-晶圓片表面經常出現的缺陷。Acceptor-Anelement,suchasboron,indium,andgalliumusedtocreateafreeholeinasemiconductor.The

18、acceptoratomsarerequiredtohaveonelessvalenceelectronthanthesemiconductor.受主一種用來在半導體中形成空穴的元素，比如硼、錮和錢。受主原子必須比半導體元素少一價電子AlignmentPrecision-Displacementofpatternsthatoccursduringthephotolithographyprocess.套準精度-在光刻工藝中轉移圖形的精度。Anisotropic-Aprocessofetchingthathasverylittleornoundercutting各向異性在蝕刻過程中，只做少量或不做

19、側向凹刻。AreaContamination-Anyforeignparticlesormaterialthatarefoundonthesurfaceofawafer.Thisisviewedasdiscoloredorsmudged,anditistheresultofstains,fingerprints,waterspots,etc.沾污區域-任何在晶片表面的外來粒子或物質。由沾污、手印和水滴產生的污染。Azimuth,inEllipsometry-Theanglemeasuredbetweentheplaneofincidenceandthemajoraxisoftheellipse

20、.橢圓方位角-測量入射面和主晶軸之間的角度。Backside-Thebottomsurfaceofasiliconwafer.(Note:Thistermisnotpreferred;instead,usebacksurface*.)背面-晶片的底部表面。（注：不推薦該術語，建議使用“背部表面”）BaseSiliconLayer-Thesiliconwaferthatislocatedunderneaththeinsulatorlayer,whichsupportsthesiliconfilmontopofthewafer.底部硅層在絕緣層下部的晶片，是頂部硅層的基礎。Bipolar-Tran

21、sistorsthatareabletousebothholesandelectronsaschargecarriers.雙極晶體管能夠采用空穴和電子傳導電荷的晶體管。BondedWafers-Twosiliconwafersthathavebeenbondedtogetherbysilicondioxide,whichactsasaninsulatinglayer.綁定晶片兩個晶片通過二氧化硅層結合到起，作為絕緣層。BondingInterface-Theareawherethebondingoftwowafersoccurs.綁定面-兩個晶片結合的接觸區。BuriedLayer-Apath

22、oflowresistanceforacurrentmovinginadevice.Manyofthesedopantsareantimonyandarsenic.埋層-為了電路電流流動而形成的低電阻路徑，攙雜劑是睇和碎。BuriedOxideLayer(BOX)-Thelayerthatinsulatesbetweenthetwowafers.氧化埋層(BOX).在兩個晶圓片間的絕緣層。Carrier-Valenceholesandconductionelectronsthatarecapableofcarryingachargethroughasolidsurfaceinasiliconw

23、afer.載流子-晶片中用來傳導電流的空穴或電子。Chemical-MechanicalPolish(CMP)-Aprocessofflatteningandpolishingwafersthatutilizesbothchemicalremovalandmechanicalbuffing.Itisusedduringthefabricationprocess.化學-機械拋光(CMP).平整和拋光晶圓片的工藝，采用化學移除和機械拋光兩種方式。此工藝在前道工藝中使用。ChuckMark-Amarkfoundoneithersurfaceofawafer,causedbyeitheraroboticendeffector,achuck,orawand.片任意表面發現的由機械手、卡盤或托盤造成的痕跡。CleavagePlane-Afractureplanethatispreferred.解理面-破裂面Crack-Amarkfoundonawaferthatisgreaterthan0.25mminlength.裂紋-長度大于0.25毫米的晶圓片表面微痕。Crater-Visibleunderdiffusedilluminatio