PART1ElectricalandElectronicEngineeringBasicsSection4PowerSemiconductorDevicesNewWordsandExpressions

LanguagepointsComplementNewWordsandExpressionsconvertern.轉換器，換流器，變流器matrixn.模型，矩陣dioden.二極管，半導體二極管thyristorn.晶閘管triacn.三端雙向晶閘管GTO門極可關斷晶閘管BJT雙極結型晶體管powerMOSFET電力MOS場效應晶體管SIT靜態感應晶體管NewWordsandExpressionsIGBT絕緣柵雙極型晶體管MCTMOS控制晶閘管IGCT集成門極換向晶閘管rectificationn.整流feedbackn.反饋freewheelingn.單向傳動snubbern.緩沖器，減震器intrinsicadj.固有的，體內的，本征NewWordsandExpressionsforwardbiased正向偏置conductionn.

導電,傳導reversebiased反向偏置leakagecurrent漏電流thresholdn.門限，閾限，極限breakdownn.擊穿，雪崩recoveryn.恢復schottkydiode肖基特二極管NewWordsandExpressionsworkhorsen.重載，重負荷thyratronn.閘流管breakovern.導通latchingcurrent閉鎖電流holdingcurrent保持電流phasecontrolled相控的asymmetricadj.不對稱的forcecommutated強制換向NewWordsandExpressionsSMPS開關電源BLDM無刷直流電動機steppermotor步進電動機hybridn.混合emittern.發射極saturationn.飽和LanguagePoints[1]Powersemiconductordevicescons-titutetheheartofmodernpowerelectronicapparatus.Theyareusedinpowerelec-tronicconversionintheformofamatrixofon-offswitches.Andtheswitchingmodepowerconversiongiveshighefficiency.LanguagePoints[3]Theyarealsousedinfeedbackandthefreewheelingfunctionsofconvertersandsnubbers.AtypicalpowerdiodehasP-I-Nstructure,thatis,itisaP-Njunctionwithanearintrinsicsemiconductorlayer(I-layer)inthemiddletosustainreversevoltage.LanguagePoints[4]Ifthereversevoltageexceedsathre-sholdvalue,calledthebreakdownvoltage,thedevicegoesthroughavalanchebreak-down,whichiswhenreversecurrentbecomeslargeandthediodeisdestroyedbyheatingduetolargepowerdissipationinthejunction.LanguagePoints[5]Thyristors,orsilicon-controlledrectifiers(SCRs)havebeenthetraditionalworkhorsesforbulkpowerconversionandcontrolinindustry.Themoderneraofsolid-statepowerelectronicsstartedduetotheintroductionofthisdeviceinthelate1950s.LanguagePoints[6]Often,itisafamilynamethatincludesSCR,TRIAC,GTO,MCT,andIGCT.Thy-ristorscanbeclassifiedasstandard,orslowphase-control-typeandfast-switching,voltage-fedinverter-type.Theinverter-typehasrecentlybecomeobsolete.LanguagePoints[7]Basically,thyristorisathree-junctionP-N-P-Ndevice,whereP-N-PandN-P-Ncomponenttransistorsareconnectedinregenerativefeedbackmode.Thedeviceblocksvoltageinboththeforwardandreversedirection(symmetricblocking).LanguagePoints[8]Atriacshasacomplexmultiple-junctionstructure,butfunctionally,itisanintegrationofapairofphase-controlledthyristorsconnectedininverse-parallelonthesamechip.LanguagePoints[9]Awell-designedRCsnubberisessen-tialforatriaccircuit.Triacsareusedinlightdimming,heatingcontrol,alliance-typemotordrives,andsolid-staterelayswithtypically50/60Hzsupplyfrequency.LanguagePoints[11]GTOsareavailablewithasymmetricandsymmetricvoltage-blockingcapabilities,whichareusedinvoltage-fedandcurrent-fedconverters,respectively．[12]GTOsareusedinmotordrives,staticVARcompensators(SVCs),andAC/DCpowersupplieswithhighpowerratings.Whenlarge-powerGTOsbecameavailable,theyoustedtheforce-commutated,voltage-fedthyristorinverters.LanguagePoints[13]Unlikethedevicesdiscussedsofar,apowerMOSFET(metal-oxidesemi-conductorfield-effecttransistor)isaunipolar,majoritycarrier,“zerojunction”,voltage-controlleddevice．[14]MOSFETsareextremelypopularinlow-voltage,low-power,andhigh-frequen-cyswitchingapplications,includeswitchingmodepowersupplies,brushlessDCmo-tors,steppermotordrives,andsolid-stateDCrelays.LanguagePoints[15]Theintroductionofinsulatedgatebipolartransistorsinthemid-1980swasanimportantmilestoneinthehistoryofpowersemiconductordevices．TheyareextremelypopulardevicesinpowerelectronicsuptomediumpowerrangeandareappliedextensivelyinDC/ACdrivesandpowersupplysystems.TheyoustedBJTsintheupperrange,andarecurrentlyoustingGTOsinthelowerpowerrange.LanguagePoints[16]AnIGBTisbasicallyahybridMOS-gatedturn-on/offbipolartransistorthatcombinestheadvantagesofbothaMOSFETandBJT.ItsarchitectureisessentiallysimilartothatofaMOSFET,exceptanadditionalP+layerhasbeenaddedatthecollectorovertheN+drainlayeroftheMOSFET.LanguagePoints[17]AnMOS-controlledthyristor,asthenameindicates,isathyristor-like,trigger-into-conductionhybriddevicethatcanbeturnedonoroffbyashortvoltagepulseontheMOSgate.Thedevicehasamicrocellconstruction,wherethousandsofmicrodevicesareconnectedinparallelonthesamechip.Thecellstructureissomewhatcomplex.LanguagePoints[18]TheMCTwascommerciallyintroducedin1992,andcurrently,medium-powerdevicesareavailablecommercially.Thefutureacceptanceofthedeviceremainsuncertainatthispoint.[19]Basically,itisahigh-voltage,high-power,hard-driven,asymmetric-blockingGTOwithunityturn-offcurrentgain.LanguagePoints[21]IGCThasbeenappliedinpowersystemintertieinstallationsandmedium-powerindustrialdrives.ExercisesI.TranslatethefollowingintoChinese

Allthesimplecircuitelementsthatwillbeconsideredintheworkthatfollowscanbeclassifiedaccordingtotherelationshipofthecurrentthroughtheelementtothevoltageacrosstheelement.Forinstance,ifthevoltageacrosstheelementisdirectlyproportionaltothecurrentthroughit,oru=ki,weshallcalltheelementaresistor.Othertypesofsimplecircuitelementshaveaterminalvoltagewhichisproportionaltothetimederivativeortheintegralwithrespecttotimeofthecurrent.ThereExercisesI.TranslatethefollowingintoChinese

arealsoelementsinwhichthevoltageiscompletelyindependentofthecurrentorthecurrentiscompletelyindependentofthevoltage;thesearetheindependentsources.Furthermore,weshallneedtodefinespecialkindsofsourcesinwhichthesourcevoltageorcurrentdependsuponacurrentorvoltageelsewhereinthecircuit;suchsourceswillbetermeddependentsourcesorcontrolledsources.VocabularyCharacteristicI一、前綴(prefixes)1.anti-/counter-

反，抗，防，逆，耐

antivirus

防病毒；

anti-interference抗干擾；anti-phase

反相；

counterclockwise逆時針方向的（地）；countercurrent反向電流。2.

auto-

自動、自

autotransformer

自耦變壓器；

autocoder自動編碼器；

automodulation自調制；

automobile自動車。VocabularyCharacteristicI3.bi-

雙，重

bipolarrelay

雙極繼電器；

bilateral兩邊的，雙邊的；雙金屬。4.co-

共，同，一起，相互

coaxialcable

同軸電纜；

cosine

余弦。5.de-

表示相反動作

demodulator解調器；

deform

變形。6.deci-

表示十分之一，分

decimal十進制；decibel分貝;decimeter分米VocabularyCharacteristicI7.di-雙，偶，兩

diode

二極管；dipole

偶極子；

dioxide

二氧化物。8.dis-

表示相對單詞的反義詞

displace

位移；

disconnect解開，斷開。9.equi-同等，均

equipartition均分；equilibrium均衡，平衡。10.hydro-

水，氫化

hydrodynamic

水力的，水壓的，流體動力學的；

hydroelectric水力發電的。11.

hyper-

高，超，重，極度

VocabularyCharacteristicI12.in-

表示否定

inaccurate不精確的；invariable不變的。13.inter-

相互，際間

internet互聯網；interchange

互換；

interface

界面；intercitytrain

城際列車。14.mal-不，失

malfunction失靈，故障；malformation畸形；

maltreat濫用，亂用。15.mega-兆，百萬

megawatt兆瓦；megaton百萬噸級。VocabularyCharacteristicI16.micro-微觀，微型，百萬分之一

microelectronics

微電子學；

microcomputer微型計算機；

microfilm

微縮膠卷；micrometer微米；

microwave微波。17.mini-

小

minicomputer小型計算機；

minibus微型公共汽車。18.multi-多

multi-frequency多頻率。19.over-過，超，太

overfrequency

超頻；overcharge

過度充電。VocabularyCharacteristicI20.photo-光，光電，光敏

photocell光電池；photohead光電傳感頭；

photoreceptor感光器。21.post-后

postfault故障后。22.pre-

在前，預先

preheat

預熱；precondition

前提，先決條件。23.semi-

半

semiconductor

半導體。24.sub-

子，亞，低，次，副

subsystem子系統，分系統；substation變電站

subcode

子碼。VocabularyCharacteristicI25.tele-遠，電

telemetry遙測術；telecommunication

電信；

teleswitch遙控開關；telecontrol

遙控。26.thermo-

熱

thermostat

恒溫器；thermoelectric熱電的；

thermo-fuse

熱熔絲。27.tri-

三

triangle

三角形。

28.ultra-

超，過

ultra-high-frequency超高頻；ultrasonic超聲波29.un-表示相反的意思

unequal不等；unvarying不變的。VocabularyCharacteristicII一、后綴(suffixes)1.–able

形容詞的詞尾，表示“……的”

stable

穩定的；reliable

可靠的；

comparable可比較的。2.–al

形容詞詞尾，表示“……的”

digital

數字的；functional

功能的，函數的。3.-ance/-ence

名詞詞尾

capacitance電容；resistance電阻；

reactance

電抗；existence

存在。4.–ary

形容詞詞尾，表示“……”

elementary

初步的；momentary

瞬息的。VocabularyCharacteristicII5.–en

一般是形容詞+en構成，表示“使……”

soften軟化；

harden

使……變硬。6.-er/-or

表示“機器、設備、物件等”

air-oilbooster

氣-液增壓器；

aircompressor

空氣壓縮機。7.–free

形容詞詞尾，表示“無……的”，“免于……的”

loss-free

無損耗的；dust-free

無塵的。8.–ics

名詞詞尾，表示學科名稱

physics

物理學；mathematics

數學；

electronics電子學。VocabularyCharacteristicII9.–ity

構成抽象名詞，表示“性，度”

stability

穩定性；reliability可靠性；

feasibility

可行性。10.–ive

形容詞詞尾，表示“……的”