MUR10seriesSuperMechanicalGlasschipjunctionsCircuitfigure:CommonCathodeLeads:Solderablepermil-std-202,Method208timeswitchingPolarity:asmodeapplicationHighMountingLowReverseCurrent5in-lbsmaximumLeadcompliancewithEUTO-220AB1.85grams1.70grams

2011/65/EUTO-262AB1.45gramsTO-263(D2PAK)1.35gramsoutlineDimensionsPIN2PIN1PIN2PIN3TO-220ABMUR10XXCTITO-220ABMUR10XXFCTPIN2PIN2PIN1PIN2PIN3PIN1PIN3TO-262ABTO-263(DMUR10XXWCT

MUR10XXDCTPIN1PIN3PIN2&(case)優勢物微信）MUR10seriesMAXIMUMANDELECTRICALCHARACTERISTICS℃)MURRATINGSUNITMaximumrepetitivereversevoltageVRRMVMaximumRMSvoltageV70140210280350420VMaximumDCblockingvoltageVDCVMaximumaverageforwardcurrentIAV10APeakforwardsurgecurrent,8.3mssinglehalfsine-wavesuperimposedonratedloadI150ATO-220AB2.5TypicalthermalresistanceITO-220AB4.0perdiode(Note1)RTO-262AB

2.5TO-263(D2PAK)2.5OperatingjunctiontemperaturerangeTJ-55+150StoragetemperaturerangeTSTG-55+150CHARACTERISTICSUNITTypicalforwardvoltageperlegat5AVF1.001.301.70VMaximumaveragereversecurrentTJ=25°CatratedblockingvoltageTJ=125°CIR5250μATypicalreverserecoverytime(Note2)T35nSNotes:1.Thermalresistancefromjunctionto2.conditions:IIRIRR優勢物微信）MUR10series12FIG.1-TYPICALFORWARDCURRENTDERATINGCURVEFIG.3-MAXIMUMNON-REPETITIVEFORWARDSURGECURRENT250108200T=25C8.3msSingleHalfSineJEDECmethod6150410025000204060801001201401601800CASETEMPERATURE,(°C)15102050NUMBEROFCYCLESAT60HzFIG.4-TYPICALREVERSECHARACTERISTICS1000FIG.2-TYPICALINSTANTANEOUSFORWARD

CHARACTERISTICS100100TJ=125C°1010100V-200V300V-400V5TJ=25C500V-600V11.6.81.01.21.41.61.82.02.22.42.62.8.1020406080100120INSTANTANEOUSFORWARDVOLTAGE,(V)PERCENTOFRATEDPEAKREVERSEVOLTAGE,(%)FIG.6-TESTCIRCUITDIAGRAMANDREVERSE

RECOVERYTIMECHARACTERISTICS+0.5A0-0.25Atrr|||||||-1.0ANOTES:1.Rise7nsmax.,InputImpe