認識Mask以及其制作流程演示文稿目前一頁\總數二十五頁\編于三點優選認識Mask以及其制作流程目前二頁\總數二十五頁\編于三點TheRoleofMaskinICIndustry

DESIGNMASKWAFERTESTINGASSEMBLY目前三頁\總數二十五頁\編于三點HowDoesMaskWorkinWaferFAB

-------Stepper目前四頁\總數二十五頁\編于三點HowDoesMaskWorkinWaferFAB

-------Scanner目前五頁\總數二十五頁\編于三點RawMaterialofMask

BlankBIM(binarymask)PSM(phaseshiftmask)A.KRF-PSMB.ARF-PSM目前六頁\總數二十五頁\編于三點SizeofBlank

5inch90mil(5009)5inch180mil(5018)6inch120mil(6012)6inch250mil(6025)7inch250mil(7015)WhatkindofmaskSMICFABsuse?目前七頁\總數二十五頁\編于三點BlankComponent

BinaryBlankPSMBlankPhotoResist(3K,4K,4650A)CrO&Chrome(~1050A,700A)QuartzPhotoResist(2K,3K,4KA)CrO&Chrome(1000,~550A)QuartzMoSiFilmPhotoResistOpaqueMetalFilmSubstratePhotoResistOpaqueMetalFilm

PhaseShiftLayer

Substrate目前八頁\總數二十五頁\編于三點BlankQzCharacteristic

RigidityHeatExpansion(ppm/oC)MaterialSodaliteSilicon-BorideQuartzRigidity540657615MaterialSodalimeSilicon-BorideQuartzCoefficient9.43.70.5目前九頁\總數二十五頁\編于三點BlankQzCharacteristic

OpticsCharacterTransmission(%)200300400020406080100QuartzSilicon-BorideSodaLimeWaveLength(nm)That’swhywechooseQuartzasthesubstrateofblank目前十頁\總數二十五頁\編于三點HowtoTransferDesigntoMask?

WriterProcessMetrologyVis-InspectClean/MountAIMSRepair1stInspectThr-InspectSTARlightShippingDevelopStripEtch目前十一頁\總數二十五頁\編于三點Front-endProcess

BlankconfigurationPhoto-resistCrfilmQuartzExposurePhoto-resistdevelopWetetchPhoto-resiststripAEIASIRe-Etch?AEI:AfterEtchCDmeasureASI:AfterStripCDmeasureStep1Step2Step3Step4Step6Step5Step7目前十二頁\總數二十五頁\編于三點Front-endProcess

DryprocessResistCrQzH+H+H+H+H+H+H+EBEBEBH+H+H+H+H+H+H+Exposure

(EB1,EB2,EB3

DUV,LB5,LB6)PEB(PostExposureBake)SFB2500,APB5500PAGAcidgenerationAciddiffusionDeprotectionreactionDevelopment

(SFD2500,ASP5500)H+DryEtch(Gen3,Gen4)

AEI,Re-etchStrip,ASI目前十三頁\總數二十五頁\編于三點PellicleComponent

PellicleMembraneMaterialWaveLengthN.C.365nm(I-line)C.E.365,248nm(I-line,DUV)F.C.193nm(ArF)Frame(AluminumAlloy)AdhesiveTapePellicleMembrane(2~5um)PellicleFrameDoubleSideAdhesiveTapeCrGlass目前十四頁\總數二十五頁\編于三點WhatPellicleDo?

TopContaminantObjectPlanePellicleFilmBottomContaminantContaminantonPatternPlaneLenSystemUnfocusedTopContaminantImageUnfocusedBottomContaminantImageImagePlaneFocusedContaminantImageonWaferMaskPatternWaferSurfaceLight目前十五頁\總數二十五頁\編于三點ParticleImmunityControl

Particlesize(D)V.S.MinimumStand-off(T)T=(4M/N.A.)DM----MagnificationN.A.----NumericalApertureoftheLensForglasssideparticle,T=2.3mmD1T1T2D2目前十六頁\總數二十五頁\編于三點MaskQualityControl

C.D.DefectRegistration目前十七頁\總數二十五頁\編于三點CD(criticaldimension)measurement目前十八頁\總數二十五頁\編于三點DefectTypeOpaquespotParticleProtrusionIntrusionContaminationPinholeMissingARGlassfractureBreakGlassseedBridgeSolventspotHardDefectSoftDefectMissSize目前十九頁\總數二十五頁\編于三點HowtoDoMaskDefectInspect

目前二十頁\總數二十五頁\編于三點MaskLayoutExemplification

Normal

++++FiducialTestKeyTestLineMainPatternScribeLineGlobalMarkQACellBarcodeMulti-Chip

++++FiducialTestKeyTestLineScribeLineGlobalMarkQACell++AChipBChipCChipDChip+目前二十一頁\總數二十五頁\編于三點ThePrinciple

ofSTARlightInspectTheModelinSMICMaskShop(SL3UV)canonlydetectpatternsideSTAR:SynchronousTrans.AndReflected目前二十二頁\總數二十五頁\編于三點WhatisRegistration

目前二十三頁\總數二十五頁\編于三點RegistrationResultExemplification

Mask: 6”,t=0.25” QuartzMea